𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Influence of time, light and temperature on the electrical properties of zinc oxide TFTs

✍ Scribed by P. Barquinha; E. Fortunato; A. Gonçalves; A. Pimentel; A. Marques; L. Pereira; R. Martins

Book ID
108268872
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
726 KB
Volume
39
Category
Article
ISSN
0749-6036

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Influence of intrinsic defects on the pr
Influence of intrinsic defects on the properties of zinc oxide
✍ Karl Jug; Viatcheslav A. Tikhomirov 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 228 KB

## Abstract The effects of oxygen vacancies and zinc interstitials on the structure and energy of zinc oxide were studied with the semiempirical MO method MSINDO. Cyclic clusters were chosen as model systems. Single and multiple removal of oxygen atoms and zinc interstitials in zinc oxide served to

Influence of the channel layer thickness
Influence of the channel layer thickness on electrical properties of indium zinc oxide thin-film transistor
✍ Ai Hua Chen; Hong Tao Cao; Hai Zhong Zhang; Ling Yan Liang; Zhi Min Liu; Zheng Y 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 751 KB

Thin-film transistors (TFTs) were fabricated on SiO 2 /n + -Si substrates using amorphous binary In 2 O 3 -ZnO (a-IZO) films with different thickness for active channel layers deposited by the rf magnetron sputtering at room temperature. The performance of devices was found to be thickness dependent