## Influence of Intrinsic Defects on the Electrical Properties of AIBIIICX1 Compounds The electrical parameters of undoped melt grown A'B1I1Cz1 crystals are compared with predictions which can made considering the deviations from stoichiometry due to the incongruent evaporation of these compounds.
Influence of intrinsic defects on the properties of zinc oxide
β Scribed by Karl Jug; Viatcheslav A. Tikhomirov
- Publisher
- John Wiley and Sons
- Year
- 2008
- Tongue
- English
- Weight
- 228 KB
- Volume
- 29
- Category
- Article
- ISSN
- 0192-8651
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β¦ Synopsis
Abstract
The effects of oxygen vacancies and zinc interstitials on the structure and energy of zinc oxide were studied with the semiempirical MO method MSINDO. Cyclic clusters were chosen as model systems. Single and multiple removal of oxygen atoms and zinc interstitials in zinc oxide served to determine the defect formation energy and the band gap. The interaction between two and three oxygen vacancies was investigated. The vacancies cause a decrease of the band gap, which originates from an occupied defect level. This is also found for zinc interstitials under zinc rich conditions. The defect formation energy of such zinc interstitials is found to be lower than that of oxygen vacancies at 0 K but decreases for oxygen vacancies and increases for zinc interstitials with increasing temperature. Β© 2008 Wiley Periodicals, Inc. J Comput Chem, 2008
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