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Influence of the misorientation of 6H–SiC substrate on the quality of GaN epilayer grown by MOVPE

✍ Scribed by Shuang Qu; Chengxin Wang; Shuqiang Li; Xiangang Xu; Huihui Shao; Yan Peng; Yuqiang Gao; Xiufang Chen; Xiaobo Hu

No coin nor oath required. For personal study only.

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