Influence of the flow, etching time and reactor cleaning method on the etching rate and selectivity of reactive ion etching of SiO2— Photoresist system

✍ Scribed by Z. Novotný

• Book ID: 112569997
• Publisher: Springer
• Year: 1991
• Tongue: English
• Weight: 419 KB
• Volume: 41
• Category: Article
• ISSN: 0011-4626
• DOI: 10.1007/bf01598139