✦ LIBER ✦
171. Influence of boron and phosphorus ion bombardment on the etching rate of thermally grown oxide: O V Sopov et al, Electronic Technology, Scient-techn Coll, Semiconductor Devices, No 4, 1971, 112–119 (in Russian)
- Publisher
- Elsevier Science
- Year
- 1973
- Tongue
- English
- Weight
- 138 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0042-207X
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