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Influence of the chemical nature of implanted ions on the structure of a silicon layer damaged by implantation

✍ Scribed by Shcherbachev, K. D.; Voronova, M. I.; Bublik, V. T.; Mordkovich, V. N.; Pazhin, D. M.; Zinenko, V. I.; Agafonov, Yu. A.

Book ID
121584117
Publisher
SP MAIK Nauka/Interperiodica
Year
2013
Tongue
English
Weight
354 KB
Volume
58
Category
Article
ISSN
1063-7745

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✍ Shcherbachev, Kirill ;Bailey, Melanie J. πŸ“‚ Article πŸ“… 2011 πŸ› John Wiley and Sons 🌐 English βš– 712 KB

## Abstract An investigation into the influence of implantation conditions (dose, energy, and target temperature) of He^+^ ions on the damage structure of GaAs (100) substrates was performed by HRXRD, scanning electron microscopy, and Nomarski microscopy. Blistering is shown to become apparent as c