Influence of implantation conditions of He+ ions on the structure of a damaged layer in GaAs(001)

✍ Scribed by Shcherbachev, Kirill ;Bailey, Melanie J.

• Book ID: 105366652
• Publisher: John Wiley and Sons
• Year: 2011
• Tongue: English
• Weight: 712 KB
• Volume: 208
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.201184259

✦ Synopsis

Abstract

An investigation into the influence of implantation conditions (dose, energy, and target temperature) of He^+^ ions on the damage structure of GaAs (100) substrates was performed by HRXRD, scanning electron microscopy, and Nomarski microscopy. Blistering is shown to become apparent as characteristic features of isolines in RSMs. We propose that the formation of the defects yielding a characteristic XRDS is defined by the behavior of implanted atoms in the GaAs matrix, depending on two competing processes: (1) formation of the gas‐filled bubbles; (2) diffusion of the He atoms from the bubbles toward the surface and deep into the GaAs substrate. We conclude that the gas‐filled bubbles change the structure of the irradiated layer, resulting in the formation of strained crystalline areas of the GaAs matrix.