✦ LIBER ✦

Influence ofin situphotoexcitation on structure of damaged layer in GaAs (001) substrates implanted with Ar3+ions

✍ Scribed by K. D. Shcherbatchev; V. T. Bublik; Yu. F. Trush; A. S. Markevich; V. N. Mordkovich

Book ID: 110134034
Publisher: SP MAIK Nauka/Interperiodica
Year: 2003
Tongue: English
Weight: 71 KB
Volume: 48
Category: Article
ISSN: 1063-7745
DOI: 10.1134/1.1564192

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Influence of implantation conditions of

Influence of implantation conditions of He+ ions on the structure of a damaged layer in GaAs(001)

✍ Shcherbachev, Kirill ;Bailey, Melanie J. 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 712 KB

## Abstract An investigation into the influence of implantation conditions (dose, energy, and target temperature) of He^+^ ions on the damage structure of GaAs (100) substrates was performed by HRXRD, scanning electron microscopy, and Nomarski microscopy. Blistering is shown to become apparent as c