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Influence of silicon carbide interlayer evolution on diamond heteroepitaxy during bias enhanced nucleation on silicon substrates

✍ Scribed by Sarrieu, Cyril; Bauer-Grosse, Elizabeth; Barrat, Silvère

Book ID
118130533
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
648 KB
Volume
20
Category
Article
ISSN
0925-9635

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## Abstract Diamond synthesis by microwave plasma assisted chemical vapour deposition (MPCVD) with a bias enhanced nucleation (BEN) step constitutes the most efficient method to obtain heteroepitaxy and is also useful to reach high nucleation densities. In this study, sequential reflection high‐ene