Frequency and Duty Cycle Dependence on the Pulsed Bias-Enhanced Nucleation of Highly Oriented Diamond on (100) Silicon
✍ Scribed by Wolter, S.D. ;Okuzumi, F. ;Prater, J.T. ;Sitar, Z.
- Publisher
- John Wiley and Sons
- Year
- 2001
- Tongue
- English
- Weight
- 195 KB
- Volume
- 186
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Pulsed bias-enhanced nucleation of highly oriented diamond on (100) silicon is reported. A square waveform substrate bias was implemented in this investigation employing a pulse ON bias voltage of --250 V and a pulse OFF bias voltage of 0 V. An evaluation of the pulse ON fractions of 0.17 and 0.50 revealed a duty cycle dependence on the bias time required for forming a diamond film as well as the highly oriented diamond percentage. Oriented crystallite percentages of nearly 50% and 20% were observed for the 0.17 and 0.50 pulse ON fractions, respectively. Pulse biasing from 10 to 100 Hz (again implementing a square waveform bias and a pulse ON fraction of 0.17) did not influence the process of forming the epitaxial diamond. Throughout this frequency range the onset of diamond film formation was approximately 60 min and a nominal highly oriented diamond percentage of 50% was observed.