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Influence of RF power on the structure of ZnS thin films grown by sulfurizing RF sputter deposited ZnO

✍ Scribed by Rengang Zhang; Baoyi Wang; Long Wei

Book ID
113782705
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
817 KB
Volume
112
Category
Article
ISSN
0254-0584

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## Abstract Transparent conducting, aluminium doped zinc oxide thin films (ZnO:Al) were deposited by radio frequency (RF) magnetron sputtering. The RF power was varied from 60 to 350 W whereas the substrate temperature was kept at 160 °C. The structural, electrical and optical properties of the as‐