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Influence of RF power on structure and electrical properties of sputtered SrHfON thin films

✍ Scribed by Li-ping Feng; Zheng-tang Liu; Hao Tian; Lu Liu


Book ID
113795732
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
391 KB
Volume
78
Category
Article
ISSN
0167-577X

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## Abstract Transparent conducting, aluminium doped zinc oxide thin films (ZnO:Al) were deposited by radio frequency (RF) magnetron sputtering. The RF power was varied from 60 to 350 W whereas the substrate temperature was kept at 160 °C. The structural, electrical and optical properties of the as‐