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Influence of RF power and fluorine doping on the properties of sputtered ITO thin films

✍ Scribed by M. Nisha; M.K. Jayaraj


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
325 KB
Volume
255
Category
Article
ISSN
0169-4332

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TiO 2 thin films were deposited on unheated and heated glass substrates at an elevated sputtering pressure of 3 Pa by radio frequency (RF) reactive magnetron sputtering. TiO 2 films deposited at room temperature were annealed in air for 1 h at various temperatures ranging from 300 to 600 Β°C. The str