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Influence of rapid thermal annealing on morphological and electrical properties of RF sputtered AlN films

โœ Scribed by J.P. Kar; G. Bose; S. Tuli


Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
370 KB
Volume
8
Category
Article
ISSN
1369-8001

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TiO 2 thin films were deposited on unheated and heated glass substrates at an elevated sputtering pressure of 3 Pa by radio frequency (RF) reactive magnetron sputtering. TiO 2 films deposited at room temperature were annealed in air for 1 h at various temperatures ranging from 300 to 600 ยฐC. The str