The N-doped b-Ga 2 O 3 films were grown on Si and quartz substrates by RF magnetron sputtering in different ammonia partial pressure ratios (from 0% to 30%). The influence of ammonia partial pressure ratios and annealing treatment on the optical and structural properties were studied. The microstruc
β¦ LIBER β¦
Influence of post-deposition annealing on the microstructure and properties of Ga2O3:Mn thin films deposited by RF planar magnetron sputtering
β Scribed by Joo Han Kim; Kyung Ho Yoon
- Publisher
- Springer US
- Year
- 2008
- Tongue
- English
- Weight
- 640 KB
- Volume
- 20
- Category
- Article
- ISSN
- 0957-4522
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