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Influence of Passivation Layers on Characteristics of a-InGaZnO Thin-Film Transistors

✍ Scribed by S. Liu; M. Yu; C. Lin; G. Ho; C. Cheng; C. Lai; C. Lin; Y. King; Y. Yeh


Book ID
126743332
Publisher
IEEE
Year
2011
Tongue
English
Weight
247 KB
Volume
32
Category
Article
ISSN
0741-3106

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## Abstract We investigated the role of Ga in solution‐processed InGaZnO thin film transistors (TFTs). The incorporation of Ga into a InZnO compound system results in a decrease in the carrier concentration of the films and an off‐current of TFTs. This is a result of the Ga ions forming stronger ch