Enhanced bias stress stability of a-InGaZnO thin film transistors by inserting an ultra-thin interfacial InGaZnO:N layer

✍ Scribed by Huang, Xiaoming; Wu, Chenfei; Lu, Hai; Ren, Fangfang; Chen, Dunjun; Zhang, Rong; Zheng, Youdou

• Book ID: 120344351
• Publisher: American Institute of Physics
• Year: 2013
• Tongue: English
• Weight: 962 KB
• Volume: 102
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.4805354