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Influence of intermediate-temperature buffer layer on flicker noise characteristics of MBE-grown GaN thin films and devices

✍ Scribed by B.H. Leung; W.K. Fong; C. Surya

Book ID: 108417994
Publisher: Elsevier Science
Year: 2003
Tongue: English
Weight: 99 KB
Volume: 212-213
Category: Article
ISSN: 0169-4332
DOI: 10.1016/s0169-4332(03)00023-0

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