Characterization of high-quality MBE-grown GaN films on intermediate-temperature buffer layers
โ Scribed by C.F. Zhu; W.K. Fong; B.H. Leung; C. Surya
- Publisher
- Springer
- Year
- 2001
- Tongue
- English
- Weight
- 157 KB
- Volume
- 72
- Category
- Article
- ISSN
- 1432-0630
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๐ SIMILAR VOLUMES
GaN thin films have been grown on Si(001) substrate with specially designed composite intermediate layers (CIL) consisting of an ultrathin amorphous silicon layer and a GaN/Al x Ga 1ยฑ ยฑx N multilayered buffer by low pressure metal-organic chemical vapor deposition (MOCVD). The improved film quality
We present a study on the material properties of GaN films grown on (111) silicon substrates by low-pressure metalorganic chemical vapour deposition using AlN buffer layers. This buffer layer is optimised with respect to growth temperature and time for the optical and structural properties of the Ga