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Initial growth conditions for MBE-grown GaN using high-temperature AlN buffer layer

✍ Scribed by K. Kaneko; N. Iizuka; N. Suzuki

Publisher: John Wiley and Sons
Year: 2005
Tongue: English
Weight: 141 KB
Volume: 2
Category: Article
ISSN: 1862-6351
DOI: 10.1002/pssc.200461441

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