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Influence of GaN polarity and intermediate-temperature buffer layers on strain relaxation and defects

โœ Scribed by C.X. Peng; H.M. Weng; C.F. Zhu; B.J. Ye; X.Y. Zhou; R.D. Han; W.K. Fong; C. Surya

Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
353 KB
Volume
391
Category
Article
ISSN
0921-4526

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