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Influence of interface states on field effect and capacitance-voltage characteristics of metal/oxide/a-Si:H structures

✍ Scribed by Tohru Suzuki; Masataka Hirose; Masato Ueda; Yukio Osaka


Publisher
Elsevier Science
Year
1982
Weight
326 KB
Volume
8
Category
Article
ISSN
0165-1633

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In this work, the investigation of the interface states density and series resistance from capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics in Au/SnO 2 /n-Si (MOS) structures prepared at various SnO 2 layer thicknesses by spray deposition technique have been reported. It is fa