Calculation from the current–voltage and capacitance–voltage measurements of characteristics parameters of Cd/CdS/n-Si/Au-Sb structure with CdS interface layer grown on n-Si substrate by SILAR method

✍ Scribed by M. Sağlam; A. Ateş; B. Güzeldir; M.A. Yıldırım; A. Astam

• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 196 KB
• Volume: 85
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2008.05.016