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Influence of GaCl carrier gas flow rate on properties of GaN films grown by hydride vapor-phase epitaxy

โœ Scribed by Yongliang Shao; Lei Zhang; Xiaopeng Hao; Yongzhong Wu; Xiufang Chen; Shuang Qu; Xiangang Xu; Minhua Jiang


Book ID
116608345
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
547 KB
Volume
509
Category
Article
ISSN
0925-8388

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