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Influence of epitaxy on the low temperature silicon diffusion through gold layers

โœ Scribed by A. Cros; H. Dallaporta; J.C. Oberlin

Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
690 KB
Volume
56-58
Category
Article
ISSN
0169-4332

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For IR thickness measurements of very thin silicon epitaxial layers (dep, < 3 pm) on silicon substrate the influence of the concentration profile of free carriers in the whole system is not negligible. The effects of most important profile parameters on the IR reflectance spectrum of silicon epitaxi