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Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers

✍ Scribed by Oila, J.; Ranki, V.; Kivioja, J.; Saarinen, K.; Hautojärvi, P.; Likonen, J.; Baranowski, J. M.; Pakula, K.; Suski, T.; Leszczynski, M.; Grzegory, I.

Book ID: 121872239
Publisher: The American Physical Society
Year: 2001
Tongue: English
Weight: 102 KB
Volume: 63
Category: Article
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.63.045205

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