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Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs

โœ Scribed by Tilak, V.; Green, B.; Kaper, V.; Kim, H.; Prunty, T.; Smart, J.; Shealy, J.; Eastman, L.


Book ID
124092323
Publisher
IEEE
Year
2001
Tongue
English
Weight
49 KB
Volume
22
Category
Article
ISSN
0741-3106

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โœ Kim, H. ;Tilak, V. ;Green, B.M. ;Smart, J.A. ;Schaff, W.J. ;Shealy, J.R. ;Eastma ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 86 KB ๐Ÿ‘ 2 views

Subject classification: 73.30.+y; 73.40.Kp; S7.14 Undoped AlGaN/GaN HEMTs grown on SiC substrates have recently demonstrated record output power density of 10.7 W/mm (cw) and total output power of 10 W at 10 GHz (L. F. Eastman, Joint ONR/MURI Review (5/15-16, 2001), CA (USA) [1]). In this paper, we