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Impact of strain relaxation of AlGaN barrier layer on the performance of high Al-content AlGaN/GaN HEMT

✍ Scribed by Yan Yang; Yue Hao; Jincheng Zhang; Chong Wang; Qian Feng

Book ID
107354952
Publisher
SP Science China Press
Year
2006
Tongue
English
Weight
527 KB
Volume
49
Category
Article
ISSN
1006-9321

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## Abstract High‐temperature effects on the electrical behavior of AlGaN/GaN HEMTs have been evaluated. dc measurements have been performed for different illumination and temperature conditions. The unpassivated devices present a good ohmic contact technology up to 550 Β°C in air. These high‐tempera