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Impact of Plasma Power Discharge on AlGaN/GaN HEMT Performance

✍ Scribed by Romero, M.-F.; Jiménez, A.; González-Posada Flores, F.; Martín-Horcajo, S.; Calle, F.; Muñoz, E.


Book ID
114620816
Publisher
IEEE
Year
2012
Tongue
English
Weight
445 KB
Volume
59
Category
Article
ISSN
0018-9383

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Subject classification: 73.30.+y; 73.40.Kp; S7.14 Undoped AlGaN/GaN HEMTs grown on SiC substrates have recently demonstrated record output power density of 10.7 W/mm (cw) and total output power of 10 W at 10 GHz (L. F. Eastman, Joint ONR/MURI Review (5/15-16, 2001), CA (USA) [1]). In this paper, we