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Influence of AlGaN deep level defects on AlGaN/GaN 2-DEG carrier confinement

✍ Scribed by Bradley, S.T.; Young, A.P.; Brillson, L.J.; Murphy, M.J.; Schaff, W.J.; Eastman, L.E.

Book ID
114538585
Publisher
IEEE
Year
2001
Tongue
English
Weight
59 KB
Volume
48
Category
Article
ISSN
0018-9383

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Growth pressure-dependent generation of trap states in AlGaN/GaN heterostructures was analysed. AlGaN/GaN heterostructures were grown on sapphire substrates at two different pressures of AlGaN layer growth, 150 and 200 Torr, with other growth parameters unchanged. The measured Al mole fraction in Al