𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Influence of deep levels on capacitance-voltage characteristics of AlGaN/GaN heterostructures

✍ Scribed by Osvald, J.


Book ID
121204038
Publisher
American Institute of Physics
Year
2011
Tongue
English
Weight
522 KB
Volume
110
Category
Article
ISSN
0021-8979

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Deep levels investigation of AlGaN/GaN h
✍ W. Chikhaoui; J.M. Bluet; P. Girard; G. Bremond; C. Bru-Chevallier; C. Dua; R. A πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 249 KB

In this work we investigate AlGaN/GaN HEMTs structures grown by metalorganic chemical-vapor deposition on SiC substrates. They consist of a 22 nm thick undoped AlGaN barrier with Al mole fraction x ΒΌ 0.24 on top of a 1.7 mm unintentionally doped GaN buffer layer. Structures with large gate are analy