Deep traps responsible for hysteresis in capacitance-voltage characteristics of AlGaN∕GaN heterostructure transistors

✍ Scribed by Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Markov, A. V.; Dabiran, A. M.; Wowchak, A. M.; Osinsky, A. V.; Cui, B.; Chow, P. P.; Pearton, S. J.

• Book ID: 120994764
• Publisher: American Institute of Physics
• Year: 2007
• Tongue: English
• Weight: 374 KB
• Volume: 91
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.2823607