Correlation between hysteresis phenomena and hole-like trap in capacitance-voltage characteristics of AlGaN/GaN of Schottky barrier diode

✍ Scribed by Gassoumi, M.; Saadaoui, S.; Ben Salem, M.M.; Gaquiere, C.; Maaref, H.

• Book ID: 111863589
• Publisher: EDP Sciences
• Year: 2011
• Tongue: English
• Weight: 822 KB
• Volume: 55
• Category: Article
• ISSN: 1286-0042
• DOI: 10.1051/epjap/2011110136