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Impact of Donor Traps on the 2DEG and Electrical Behavior of AlGaN/GaN MISFETs

✍ Scribed by Longobardi, Giorgia; Udrea, Florin; Sque, Stephen; Hurkx, Godefridus A. M.; Croon, Jeroen; Napoli, Ettore; Sonsky, Jan

Book ID
121826556
Publisher
IEEE
Year
2014
Tongue
English
Weight
430 KB
Volume
35
Category
Article
ISSN
0741-3106

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## Abstract High‐temperature effects on the electrical behavior of AlGaN/GaN HEMTs have been evaluated. dc measurements have been performed for different illumination and temperature conditions. The unpassivated devices present a good ohmic contact technology up to 550 Β°C in air. These high‐tempera