✦ LIBER ✦
Oxygen addition to fluorine based SiN etch process: Impact on the electrical properties of AlGaN/GaN 2DEG and transistor characteristics
✍ Scribed by H. Hahn; J. Achenbach; N. Ketteniss; A. Noculak; H. Kalisch; A. Vescan
- Book ID
- 113916073
- Publisher
- Elsevier Science
- Year
- 2012
- Tongue
- English
- Weight
- 804 KB
- Volume
- 67
- Category
- Article
- ISSN
- 0038-1101
No coin nor oath required. For personal study only.