Indium surface segregation in InGaAs-based structures prepared by molecular beam epitaxy and atomic layer molecular beam epitaxy
β Scribed by A. Bosacchi; F. Colonna; S. Franchi; P. Pascarella; P. Allegri; V. Avanzini
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 430 KB
- Volume
- 150
- Category
- Article
- ISSN
- 0022-0248
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
The structural properties as well as epitaxial growth peculiarities of thin film silicon-based heterostructures (SBH) are described with emphasis put on MBE growth of these structures. More detailed considerations are presented for the strained-layer Si 1-x Ge x /Si heterostructures. The 4.17% latti
## Abstract The operation in the 1020 nm wavelength range of strainedβlayer InGaAs/GaAs separateβconfinementβheterostucture lasers grown by molecular beam epitaxy is reported. The active region is formed by a single 80 Γ thick InGaAs quantum well with an indium content of 25%, which is close to cri