Electrical and photoluminescence properties of undoped GaSb prepared by molecular beam epitaxy and atomic layer molecular beam epitaxy

✍ Scribed by A. Bosacchi; S. Franchi; P. Allegri; V. Avanzini; A. Baraldi; C. Ghezzi; R. Magnanini; A. Parisini; L. Tarricone

• Publisher: Elsevier Science
• Year: 1995
• Tongue: English
• Weight: 454 KB
• Volume: 150
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/0022-0248(95)80058-k