Incubation time for chemical vapor deposition of copper from hexafluoroacetylacetonate–copper(I)–vinyltrimethoxysilane

✍ Scribed by Lu-Sheng Hong; Muh-Gueng Jeng

• Book ID: 104309239
• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 286 KB
• Volume: 161
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/s0169-4332(00)00278-6

✦ Synopsis

The incubation time in a metal-organic chemical vapor deposition MOCVD system using copper I -hexafluoroace-Ž Ž .Ž .. tylacetonate vinyltrimethoxysilane Cu hfac VTMOS as the precursor to grow copper films has been investigated. For film deposition on a TiNrSi substrate in the presence of H at 473 K, the incubation time is 88 min, while it decreases to 2 4.3 min on a Pt-seeded surface. The incubation phenomenon is attributed to a heterogeneous nucleation process involving surface reactions of precursor. By using a first-order reaction approximation, the incubation time is correlated with the nucleation rate constant to give an activation of 5.5 kcalrmol in a temperature range of 463 to 498 K, indicative of a surface-reaction controlled regime concerning heterogeneous Cu nucleation. Observation of the very early stage of film Ž . Ž . growth by atomic force microscopy AFM and X-ray photoelectron spectroscopy XPS reveals that growth of nucleus prevails in the period of incubation time.