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Chemical vapor deposition of copper from 1,5-cyclooctadiene copper(I) hexafluoroacetylacetonate

โœ Scribed by Reynolds, Scott K.; Smart, Christopher J.; Baran, Emil F.; Baum, Thomas H.; Larson, Carl E.; Brock, Phillip J.


Book ID
121530836
Publisher
American Institute of Physics
Year
1991
Tongue
English
Weight
510 KB
Volume
59
Category
Article
ISSN
0003-6951

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The incubation time in a metal-organic chemical vapor deposition MOCVD system using copper I -hexafluoroace-ลฝ ลฝ .ลฝ .. tylacetonate vinyltrimethoxysilane Cu hfac VTMOS as the precursor to grow copper films has been investigated. For film deposition on a TiNrSi substrate in the presence of H at 473 K,