๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Incorporation of indium and gallium in atomic layer epitaxy of InGaAs on InP substrates

โœ Scribed by Yong Huang; Jae-Hyun Ryou; Russell D. Dupuis


Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
724 KB
Volume
321
Category
Article
ISSN
0022-0248

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Growth of gallium antimonide epitaxial l
โœ Dr. L. D. Pramatarova; Dr. D. N. Tretjakov ๐Ÿ“‚ Article ๐Ÿ“… 1981 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 347 KB ๐Ÿ‘ 2 views

## Abstract In the present work the possibility is demonstrated of growing gallium antimonide epitaxial layers on indium arsenide substrates using the liquid phase epitaxial (LPE) method. The influence is nivestigated of the growth conditions on the morphology of the surface and interface of the e