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In situ X-ray photoemission spectroscopy for atomic layer epitaxy of InP and GaAs

✍ Scribed by Kodama, K.; Ozeki, M.; Sakuma, Y.; Mochizuki, K.; Ohtsuka, N.


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
309 KB
Volume
99
Category
Article
ISSN
0022-0248

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## Abstract In situ X‐ray examination at a synchrotron beamline of the solution growth of self‐assembled SiGe structures on silicon (001) substrates through the backside has been realized by a specific heating equipment and a suitable growth assembly. The furnace allows heating of the growth assemb