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In situ monitoring of the growth process in GaAs atomic layer epitaxy by gravimetric and optical methods

✍ Scribed by Akinori Koukitu; Naoyuki Takahashi; Hisashi Seki


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
538 KB
Volume
146
Category
Article
ISSN
0022-0248

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