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Incorporation of implanted In and Sb in silicon during amorphous layer regrowth

โœ Scribed by Blood, P.; Brown, W. L.; Miller, G. L.


Book ID
120013459
Publisher
American Institute of Physics
Year
1979
Tongue
English
Weight
987 KB
Volume
50
Category
Article
ISSN
0021-8979

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Solid phase epitaxial regrowth of amorph
โœ S. Ruffell; I.V. Mitchell; P.J. Simpson ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 210 KB

Medium energy ion scattering (MEIS) has been used to study the kinetics of solid phase epitaxial regrowth (SPEG) of ultrathin amorphous layers created by room temperature implantation of 5 keV energy phosphorus ions into Si(1 0 0). P ion fluences ranged from 5e14 cm ร€2 up to 1e16 cm ร€2 , the associa