Silicon regions amorphized by high dose ion implantation recrystallize under high temperature treatment. Driven by a lower configuration energy of dopant atoms in the amorphized phase than in the crystalline phase, dopant atoms are pushed in the direction of recrystallization during solid phase epit
โฆ LIBER โฆ
Solid-phase regrowth of amorphous silicon layers in the presence of the point defect flux
โ Scribed by A.V. Buravlyov; A.G. Italyantsev; Z.Ya. Krasnobayev; V.N. Mordkovich; A.F. Vyatkin
- Book ID
- 113280195
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 408 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0168-583X
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