Amorphisation and solid phase epitaxial regrowth of the silicon overlayer in SIMOX structures
β Scribed by V.V. Starkov; P.L.F. Hemment; A.F. Vyatkin
- Book ID
- 113282469
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 384 KB
- Volume
- 55
- Category
- Article
- ISSN
- 0168-583X
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π SIMILAR VOLUMES
Silicon regions amorphized by high dose ion implantation recrystallize under high temperature treatment. Driven by a lower configuration energy of dopant atoms in the amorphized phase than in the crystalline phase, dopant atoms are pushed in the direction of recrystallization during solid phase epit
Solid-phase epitaxial regrowth (SPER) of Si amorphised by ion implantation is considered as a potential solution for the fabrication of ultrashallow junctions for future technology nodes of Si CMOS devices. In the present work, a series of Epi-Si samples amorphised by ultra-low energy As implantatio