𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Amorphisation and solid phase epitaxial regrowth of the silicon overlayer in SIMOX structures

✍ Scribed by V.V. Starkov; P.L.F. Hemment; A.F. Vyatkin


Book ID
113282469
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
384 KB
Volume
55
Category
Article
ISSN
0168-583X

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Phase-field model for the dopant redistr
✍ Christoph Zechner; Dmitri Matveev; Axel Erlebach πŸ“‚ Article πŸ“… 2004 πŸ› Elsevier Science 🌐 English βš– 94 KB

Silicon regions amorphized by high dose ion implantation recrystallize under high temperature treatment. Driven by a lower configuration energy of dopant atoms in the amorphized phase than in the crystalline phase, dopant atoms are pushed in the direction of recrystallization during solid phase epit

Solid-phase epitaxial regrowth of a shal
✍ L. Capello; T.H. Metzger; M. Werner; J.A. van den Berg; M. Servidori; M. Herden; πŸ“‚ Article πŸ“… 2005 πŸ› Elsevier Science 🌐 English βš– 331 KB

Solid-phase epitaxial regrowth (SPER) of Si amorphised by ion implantation is considered as a potential solution for the fabrication of ultrashallow junctions for future technology nodes of Si CMOS devices. In the present work, a series of Epi-Si samples amorphised by ultra-low energy As implantatio