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InAs/InGaAs/InP structures for quantum dot infrared photodetectors

✍ Scribed by S. M. Landi; M. P. Pires; C. V.-B. Tribuzy; P. L. Souza; E. Marega Jr.; A. G. Silva; P. S. S. Guimarães

Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
188 KB
Volume
2
Category
Article
ISSN
1862-6351

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In this work we present the results of an electrical and structural characterization of molecular beam epitaxy (MBE) grown InAs/In 0.15 Ga 0.85 As quantum dot (QD) structures having InAs coverages of 2.0 and 3.0 ML that are, respectively, below and above the expected critical value for QD ripening i