Tuning optical properties of high In con
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B. Ilahi; L. Sfaxi; G. Bremond; H. Maaref
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Article
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2006
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Elsevier Science
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English
โ 137 KB
The effect of rapid thermal annealing on InAs quantum dots (QDs) capped with In 0.4 Ga 0.6 As/GaAs layer has been investigated by photoluminescence (PL). An unusual red shift of the PL emission peak has been observed for an annealing temperature (T a ) of 650 -C together with a pronounced improvemen