Photoluminescence mapping on InAs/InGaAs quantum dot structures
✍ Scribed by M. Dybiec; S. Ostapenko; T. V. Torchynska; E. Velásquez Lozada; P. G. Eliseev; A. Stintz; K. J. Malloy
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 168 KB
- Volume
- 2
- Category
- Article
- ISSN
- 1862-6351
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We have characterized self-assembled InAs quantum dots grown on the top of a single InGaAs/GaAs quantum well (QD's:QW) by measuring photoluminescence (PL) spectra as an effective technique. We have found that the linewidths of the PL peaks for the QD's:QW are narrower than that for the InAs quantum
In this work we present the results of an electrical and structural characterization of molecular beam epitaxy (MBE) grown InAs/In 0.15 Ga 0.85 As quantum dot (QD) structures having InAs coverages of 2.0 and 3.0 ML that are, respectively, below and above the expected critical value for QD ripening i