In situ stress measurements during the MOCVD growth of AlN buffer layers on (1 1 1) Si substrates
β Scribed by Srinivasan Raghavan; Joan M Redwing
- Book ID
- 108165662
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 257 KB
- Volume
- 261
- Category
- Article
- ISSN
- 0022-0248
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π SIMILAR VOLUMES
A single high temperature AlN (HT-AlN) buffer has been used to relieve the stress in the growth of GaN epilayers on Si (1 1 1) substrates, but the growth of crack-free GaN on Si is still difficult due to the large mismatch of the lattice and coefficient of thermal-expansion (CTE) between GaN and Si.
AlGaN/GaN high electron mobility transistor (HEMT) hetero-structures were grown on the 2-in Si (1 1 1) substrate using metalorganic chemical vapor deposition (MOCVD). Low-temperature (LT) AlN layers were inserted to relieve the tension stress during the growth of GaN epilayers. The grown AlGaN/GaN H
We investigated the growth of GaAs 1Γx Sb x (x ΒΌ 1.0, 0.82, 0.69, 0.44, 0.0) layers on Si (0 0 1) substrates using AlSb as a buffer layer. Epilayers were grown as a function of As beam equivalent pressure (BEP) under a constant Sb BEP, and they were then characterized by atomic force microscopy (AFM