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In situ strain relaxation comparison between GaAsBi and GaInAs grown by molecular-beam epitaxy

✍ Scribed by France, R.; Jiang, C.-S.; Ptak, A. J.

Book ID: 120255837
Publisher: American Institute of Physics
Year: 2011
Tongue: English
Weight: 540 KB
Volume: 98
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3562952

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